STMicroelectronics L293D, Brushed Motor Driver IC, 36 V 0.6A 16-Pin, PDIP

Technical Reference
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Load Driver ICs, STMicroelectronics

Relay and Inductive Load Drivers

Specifications
Attribute Value
Motor Type Brushed DC
Output Configuration Dual Full Bridge
Maximum IGBT Collector Current 0.6A
Maximum Collector Emitter Voltage 36 V
Mounting Type Through Hole
Package Type PDIP
Maximum Operating Supply Voltage 36 V
Pin Count 16
Minimum Operating Supply Voltage 4.5 V
Width 7.1mm
Maximum Operating Temperature +150 °C
Length 20mm
Dimensions 20 x 7.1 x 5.1mm
Height 5.1mm
Minimum Operating Temperature -40 °C
1141 In stock for FREE next working day delivery
Price Each
£ 3.96
(exc. VAT)
£ 4.75
(inc. VAT)
Units
Per unit
1 - 9
£3.96
10 - 49
£2.41
50 - 149
£2.24
150 - 499
£2.08
500 +
£1.78
Packaging Options:
Related Products
High-side switches can safely drive high currents in ...
Description:
High-side switches can safely drive high currents in resistive, inductive and capacitive grounded loads. Designed to work in the harsh automotive environment they requires both robust, low on-resistance power switch and accurate analogue circuitry for diagnostic, protection and control functions.
Description:
The STSPIN240 is a dual brush DC motor driver integrating a low RDS(ON) power stage in a small QFN 3 x 3 mm package.Both the full-bridges implement an independent PWM current controller with fixed OFF time.The device is designed to operate in battery-powered scenarios and can be forced into a ...
The STSPIN230 device integrates a triple half-bridge low ...
Description:
The STSPIN230 device integrates a triple half-bridge low RDS(ON) power stage in a small QFN - 3 x 3 mm package. The device is designed to operate in battery-powered scenarios and can be forced into a zero-consumption state, allowing a significant increase in battery life. The device offers a complete ...
The PWD13F60 is a high-density power driver integrating ...
Description:
The PWD13F60 is a high-density power driver integrating gate drivers and four N-channel power MOSFETs in dual half bridge configuration. The integrated power MOSFETs have low RDS(on) of 320 mΩ and 600 V drain-source breakdown voltage, while the embedded gate drivers high side can be easily supplied by the integrated ...