The PWD13F60 is a high-density power driver integrating gate drivers and four N-channel power MOSFETs in dual half bridge configuration. The integrated power MOSFETs have low RDS(on) of 320 mΩ and 600 V drain-source breakdown voltage, while the embedded gate drivers high side can be easily supplied by the integrated bootstrap diode. The high integration of the device allows to efficiently drive loads in a tiny space.

Power system-in-package integrating gate drivers and high-voltage power MOSFETs
Wide driver supply voltage down to 6.5 V
UVLO protection on supply voltage
3.3 V to 15 V compatible inputs with hysteresis and pull-down
Interlocking function to prevent cross conduction
Internal bootstrap diode
Outputs in phase with inputs
Very compact and simplified layout
Flexible, easy and fast design