The NXH80B120L2Q0SG is a power module containing a dual boost stage consisting of two 40A/1200V IGBTs, two 15A/1200V SiC diodes, and two 25A/1600V anti-parallel diodes for the IGBTs. Two additional 25A/1600V bypass rectifiers used for inrush current limit are included. An on-board thermistor is included.
IGBT Specifications: VCE(SAT) = 2.2 V, ESW = 2180 uJ Fast IGBT with low VCE(SAT) for high efficiency 25 A / 1600 V Bypass and Anti−parallel Diodes Low VF bypass diodes for excellent efficiency in bypass mode SiC Rectifier Specification: VF = 1.4 V SiC Diode for high speed switching Solderable Pins Easy mounting Dual Boost 40 A / 1200 V IGBT + SiC Rectifier Hybrid Module Thermistor Applications Solar Inverter Boost Stage Solar Inverter UPS