Infineon 2ED2184S06FXUMA1, 2.5 A, 10 → 20V, DSO
- RS Stock No.:
- 258-0612
- Mfr. Part No.:
- 2ED2184S06FXUMA1
- Brand:
- Infineon
Subtotal (1 reel of 2500 units)*
£1,670.00
(exc. VAT)
£2,005.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 27 July 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 2500 + | £0.668 | £1,670.00 |
*price indicative
- RS Stock No.:
- 258-0612
- Mfr. Part No.:
- 2ED2184S06FXUMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Logic Type | CMOS, LSTTL | |
| Output Current | 2.5 A | |
| Supply Voltage | 10 → 20V | |
| Package Type | DSO | |
| Fall Time | 15ns | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Logic Type CMOS, LSTTL | ||
Output Current 2.5 A | ||
Supply Voltage 10 → 20V | ||
Package Type DSO | ||
Fall Time 15ns | ||
The Infineon 650 V half-bridge high current, and high speed gate driver for MOSFET and IGBT, with typical 2.5 A sink and source current in DSO-8 package. Based on Infineon SOI-technology, having excellent ruggedness and noise immunity against negative transient voltages on VS pin. No parasitic thyristor structures present in the device, hence no parasitic latch up at all temperature and voltage conditions.
Negative VS transient immunity of 100 V
Integrated ultra-fast, low resistance bootstrap diode, lower the BOM cost
Floating channel designed for bootstrap operation
Integrated shoot-through protection with built-in dead time (400 ns)
Maximum supply voltage of 25 V
50% lower level-shift losses
Integrated ultra-fast, low resistance bootstrap diode, lower the BOM cost
Floating channel designed for bootstrap operation
Integrated shoot-through protection with built-in dead time (400 ns)
Maximum supply voltage of 25 V
50% lower level-shift losses