Infineon 2ED21091S06FXUMA1, 290 mA, 10/20V, DSO-8

Subtotal (1 reel of 2500 units)*

£1,132.50

(exc. VAT)

£1,360.00

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 22 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
2500 +£0.453£1,132.50

*price indicative

RS Stock No.:
258-0605
Mfr. Part No.:
2ED21091S06FXUMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Logic Type

CMOS, LSTTL

Output Current

290 mA

Supply Voltage

10/20V

Package Type

DSO-8

Fall Time

35ns

The Infineon 650 V half-bridge high speed power MOSFET and IGBT gate driver with typical 0.29 source current, and 0.7 sink current in DSO-8 package. Based on Infineon SOI-technology, having excellent ruggedness and noise immunity against negative transient voltages on VS pin. No parasitic thyristor structures present in the device, hence no parasitic latch up at all temperature and voltage conditions.

integrated ultra-fast, low resistance bootstrap diode, lower the BOM cost
Floating channel designed for bootstrap operation
Independent under voltage lockout for both channels
The dual function DT/SD input turns off both channels