onsemi NCP51561DBDWR2G MOSFET Gate Driver, 5V 16-Pin, SOIC
- RS Stock No.:
- 244-9161P
- Mfr. Part No.:
- NCP51561DBDWR2G
- Brand:
- onsemi
Bulk discount available
Subtotal 10 units (supplied on a continuous strip)*
£33.60
(exc. VAT)
£40.30
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 966 unit(s), ready to ship
Units | Per unit |
|---|---|
| 10 - 99 | £3.36 |
| 100 - 499 | £2.91 |
| 500 + | £2.56 |
*price indicative
- RS Stock No.:
- 244-9161P
- Mfr. Part No.:
- NCP51561DBDWR2G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Supply Voltage | 5V | |
| Pin Count | 16 | |
| Fall Time | 16ns | |
| Package Type | SOIC | |
| Driver Type | MOSFET | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Supply Voltage 5V | ||
Pin Count 16 | ||
Fall Time 16ns | ||
Package Type SOIC | ||
Driver Type MOSFET | ||
The ON Semiconductor Isolated High Current IGBT/MOSFET Gate Driver is high−current single channel. IGBT/MOSFET gate drivers with 5 kVrms internal galvanic isolation,designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options such as Active Miller Clamp (version A/D/F), negative power supply (version B) and separate high and low (OUTH and OUTL) driver outputs (version C/E) for system design convenience. The driver accommodate wide range of input bias voltage and signal levels from 3.3V to 20V and they are available in wide−body SOIC−8 package.
High Peak Output Current (+6.5 A/−6.5 A)
Low Clamp Voltage Drop Eliminates the Need of Negative Power Supply to Prevent Spurious Gate Turn−on (Version A/D/F)
Short Propagation Delays with Accurate Matching
IGBT/MOSFET Gate Clamping during Short Circuit
IGBT/MOSFET Gate Active Pull Down
Tight UVLO Thresholds for Bias Flexibility
Wide Bias Voltage Range including Negative VEE2 (Version B)
3.3 V, 5 V, and 15 V Logic Input
5 kVrms Galvanic Isolation
High Transient Immunity
High Electromagnetic Immunity
Low Clamp Voltage Drop Eliminates the Need of Negative Power Supply to Prevent Spurious Gate Turn−on (Version A/D/F)
Short Propagation Delays with Accurate Matching
IGBT/MOSFET Gate Clamping during Short Circuit
IGBT/MOSFET Gate Active Pull Down
Tight UVLO Thresholds for Bias Flexibility
Wide Bias Voltage Range including Negative VEE2 (Version B)
3.3 V, 5 V, and 15 V Logic Input
5 kVrms Galvanic Isolation
High Transient Immunity
High Electromagnetic Immunity