The Infineon 650 V half-bridge gate driver with integrated bootstrap diode has unique Infineon Thin-Film-Silicon on Insulator (SOI)-Technology provides excellent ruggedness and noise immunity. The Schmitt trigger logic inputs are compatible with standard CMOS or LSTTL logic down to 3.3 V. The output drivers features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 V. Additionally, the offline clamping function provides an inherent protection of the parasitic turn-on by floating gate conditions when IC is not supplied.

Infineon thin-film-SOI-technology
Fully operational to +600 V
Floating channel designed for bootstrap operation
Gate drive supply range from 10 V to 20 V
Undervoltage lockout for both channels
3.3 V, 5 V and 15 V input logic compatible
RoHS compliant