Infineon 2ED2106S06FXUMA1 MOSFET Gate Driver, 290 mA, 20V 8-Pin, DSO
- RS Stock No.:
- 226-6020P
- Mfr. Part No.:
- 2ED2106S06FXUMA1
- Brand:
- Infineon
Bulk discount available
Subtotal 50 units (supplied on a continuous strip)*
£24.10
(exc. VAT)
£28.90
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 2,390 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
---|---|
50 - 90 | £0.482 |
100 - 240 | £0.461 |
250 - 490 | £0.441 |
500 + | £0.411 |
*price indicative
- RS Stock No.:
- 226-6020P
- Mfr. Part No.:
- 2ED2106S06FXUMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Output Current | 290 mA | |
Supply Voltage | 20V | |
Pin Count | 8 | |
Fall Time | 80ns | |
Package Type | DSO | |
Driver Type | MOSFET | |
Select all | ||
---|---|---|
Brand Infineon | ||
Output Current 290 mA | ||
Supply Voltage 20V | ||
Pin Count 8 | ||
Fall Time 80ns | ||
Package Type DSO | ||
Driver Type MOSFET | ||
The Infineon 2ED2106S06F is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It is based on SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at negative voltages of up to - 11 Von VS pin on transient voltage. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction.
Floating channel designed for bootstrap operation
Operating voltages (VS node) upto + 650 V
Maximum bootstrap voltage (VB node) of + 675 V
Integrated ultra-fast, low resistance bootstrap diode
Operating voltages (VS node) upto + 650 V
Maximum bootstrap voltage (VB node) of + 675 V
Integrated ultra-fast, low resistance bootstrap diode