Infineon 1EDF5673FXUMA1 MOSFET Gate Driver, 8 A, 4V 16-Pin, PG-DSO-16-11
- RS Stock No.:
- 222-4759P
- Mfr. Part No.:
- 1EDF5673FXUMA1
- Brand:
- Infineon
Bulk discount available
Subtotal 25 units (supplied on a continuous strip)*
£27.40
(exc. VAT)
£32.875
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 2,495 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 25 - 45 | £1.096 |
| 50 - 120 | £1.066 |
| 125 - 245 | £1.038 |
| 250 + | £1.012 |
*price indicative
- RS Stock No.:
- 222-4759P
- Mfr. Part No.:
- 1EDF5673FXUMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Logic Type | CMOS | |
| Output Current | 8 A | |
| Supply Voltage | 4V | |
| Pin Count | 16 | |
| Package Type | PG-DSO-16-11 | |
| Fall Time | 4.5ns | |
| Driver Type | MOSFET | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Logic Type CMOS | ||
Output Current 8 A | ||
Supply Voltage 4V | ||
Pin Count 16 | ||
Package Type PG-DSO-16-11 | ||
Fall Time 4.5ns | ||
Driver Type MOSFET | ||
The Infineon single-channel galvanic ally isolated gate driver IC 1EDF5673F is a perfect fit for enhancement mode (e-mode) gallium nitride (GaN) HEMTs with non-isolated gate (diode input characteristic) and low threshold voltage, such as CoolGaN™. It ensures robust and highly efficient high voltage GaN switch operation whilst concurrently minimizing R&D efforts and shortening time-to-market.
Low ohmic outputs
Single-channel galvanic isolation
Integrated galvanic isolation
Single-channel galvanic isolation
Integrated galvanic isolation