onsemi NCP51705MNTXG MOSFET Gate Driver 1, 6 A, 6 A, 22V 24-Pin, QFN
- RS Stock No.:
- 178-4261
- Mfr. Part No.:
- NCP51705MNTXG
- Brand:
- onsemi
Subtotal (1 reel of 3000 units)*
£5,439.00
(exc. VAT)
£6,528.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 6,000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
---|---|---|
3000 + | £1.813 | £5,439.00 |
*price indicative
- RS Stock No.:
- 178-4261
- Mfr. Part No.:
- NCP51705MNTXG
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Output Current | 6 A, 6 A | |
Supply Voltage | 22V | |
Pin Count | 24 | |
Fall Time | 15ns | |
Package Type | QFN | |
Number of Outputs | 1 | |
Driver Type | MOSFET | |
Rise Time | 15ns | |
Topology | Half Bridge | |
High and Low Sides Dependency | Independent | |
Number of Drivers | 1 | |
Time Delay | 50ns | |
Bridge Type | Full Bridge, Half Bridge | |
Polarity | Inverting, Non-Inverting | |
Mounting Type | Surface Mount | |
Select all | ||
---|---|---|
Brand onsemi | ||
Output Current 6 A, 6 A | ||
Supply Voltage 22V | ||
Pin Count 24 | ||
Fall Time 15ns | ||
Package Type QFN | ||
Number of Outputs 1 | ||
Driver Type MOSFET | ||
Rise Time 15ns | ||
Topology Half Bridge | ||
High and Low Sides Dependency Independent | ||
Number of Drivers 1 | ||
Time Delay 50ns | ||
Bridge Type Full Bridge, Half Bridge | ||
Polarity Inverting, Non-Inverting | ||
Mounting Type Surface Mount | ||
The NCP51705 driver is designed to primarily drive SiC MOSFET transistors. To achieve the lowest possible conduction losses, the driver is capable to deliver the maximum allowable gate voltage to the SiC MOSFET device. By providing high peak current during turn−on and turn−off, switching losses are also minimized. For improved reliability, dV/dt immunity and even faster turn−off, the NCP51705 can utilize its on−board charge pump to generate a user selectable negative voltage rail.
Allow independent Turn-ON/Turn-OFF Adjustment
Efficient SiC MOSFET Operation during the Conduction Period
Fast Turn-off and Robust dV/dt Immunity
Minimize complexity of bias supply in isolated gate drive applications
Sufficient VGS amplitude to match SiC best performance
Self protection of the design
Efficient SiC MOSFET Operation during the Conduction Period
Fast Turn-off and Robust dV/dt Immunity
Minimize complexity of bias supply in isolated gate drive applications
Sufficient VGS amplitude to match SiC best performance
Self protection of the design
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