Infineon FF1MR12MM1HB11BPSA1 MOSFET Gate Driver 2, 420 A, 10 → 23V, AG-ECONOD
- RS Stock No.:
- 351-898
- Mfr. Part No.:
- FF1MR12MM1HB11BPSA1
- Brand:
- Infineon
Subtotal (1 unit)*
£774.84
(exc. VAT)
£929.81
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 10 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 + | £774.84 |
*price indicative
- RS Stock No.:
- 351-898
- Mfr. Part No.:
- FF1MR12MM1HB11BPSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Output Current | 420 A | |
| Supply Voltage | 10 → 23V | |
| Package Type | AG-ECONOD | |
| Fall Time | 77ns | |
| Driver Type | MOSFET | |
| Number of Drivers | 2 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Output Current 420 A | ||
Supply Voltage 10 → 23V | ||
Package Type AG-ECONOD | ||
Fall Time 77ns | ||
Driver Type MOSFET | ||
Number of Drivers 2 | ||
- COO (Country of Origin):
- HU
The Infineon EconoDUAL 3 CoolSiC MOSFET half bridge module 1200 V, 1.4 mΩ with enhanced generation 1, NTC and Press FIT contact technology. Also available with pre-applied Thermal Interface Material or with wave structure on the backside of the base plate for direct liquid cooling.
Low switching losses
Superior gate oxide reliability
Higher gate threshold voltage
Higher power output
Robust integrated body diode
High cosmic ray robustness
High speed switching module
Screw power terminals
Integrated NTC temperature sensor
Isolated baseplate
Superior gate oxide reliability
Higher gate threshold voltage
Higher power output
Robust integrated body diode
High cosmic ray robustness
High speed switching module
Screw power terminals
Integrated NTC temperature sensor
Isolated baseplate