Hutchinson Le Joint Français FKM O-Ring O-Ring, 22mm Bore, 26mm Outer Diameter

Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

The Hutchinson Le Joint Français O-Ring is a circular ring with a round cross-section, representing the simplest sealing system. It fits into a groove that is easy to machine, compact in size, and symmetrical, reducing the risk of incorrect fitting. The O-Ring is low cost and suitable for applications across a wide temperature range.

Very good resistance to mineral oils and household gases
Quite good mechanical behaviour
Good impermeability

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.