Infineon 64kbit Serial-I2C FRAM Memory 8-Pin SOIC, FM24CL64B-DG
- RS Stock No.:
- 273-7381
- Mfr. Part No.:
- FM24CL64B-DG
- Brand:
- Infineon
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Subtotal (1 unit)*
£3.72
(exc. VAT)
£4.46
(inc. VAT)
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In Stock
- Plus 1,118 unit(s) shipping from 20 October 2025
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Units | Per unit |
---|---|
1 - 9 | £3.72 |
10 - 24 | £3.30 |
25 - 49 | £3.24 |
50 - 99 | £3.18 |
100 + | £2.95 |
*price indicative
- RS Stock No.:
- 273-7381
- Mfr. Part No.:
- FM24CL64B-DG
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Memory Size | 64kbit | |
Organisation | 8K x 8 | |
Interface Type | Serial-I2C | |
Data Bus Width | 8bit | |
Package Type | SOIC | |
Pin Count | 8 | |
Select all | ||
---|---|---|
Brand Infineon | ||
Memory Size 64kbit | ||
Organisation 8K x 8 | ||
Interface Type Serial-I2C | ||
Data Bus Width 8bit | ||
Package Type SOIC | ||
Pin Count 8 | ||
The Infineon FRAM is a 64 Kbit non volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is non volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 121 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other non volatile memories. Unlike EEPROM, it performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other non volatile memories.
RoHS compliant
Low power consumption
Fast 2 wire Serial interface
AEC Q100 Grade 1 compliant
High endurance 10 trillion read and write
Advanced high reliability ferroelectric process
Low power consumption
Fast 2 wire Serial interface
AEC Q100 Grade 1 compliant
High endurance 10 trillion read and write
Advanced high reliability ferroelectric process