The Infineon FRAM Memory is a 4 Mbit non volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is non volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system level reliability problems caused by serial flash, EEPROM, and other non volatile memories.

RoHS compliant
Low voltage operation
Low power consumption
Very fast serial peripheral interface
Sophisticated write protection scheme