Infineon 4kbit I2C FRAM Memory 8-Pin SOIC, FM24C04B-GTR
- RS Stock No.:
- 215-5779P
- Mfr. Part No.:
- FM24C04B-GTR
- Brand:
- Infineon
Subtotal 5 units (supplied in a tube)*
£5.68
(exc. VAT)
£6.815
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 4,085 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 5 + | £1.136 |
*price indicative
- RS Stock No.:
- 215-5779P
- Mfr. Part No.:
- FM24C04B-GTR
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Memory Size | 4kbit | |
| Organisation | 512 x 8 | |
| Interface Type | I2C | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 10ns | |
| Mounting Type | Surface Mount | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Dimensions | 4.97 x 3.98 x 1.48mm | |
| Length | 4.97mm | |
| Maximum Operating Supply Voltage | 5.5 V | |
| Width | 3.98mm | |
| Height | 1.48mm | |
| Maximum Operating Temperature | +85 °C | |
| Automotive Standard | AEC-Q100 | |
| Minimum Operating Temperature | -40 °C | |
| Minimum Operating Supply Voltage | 4.5 V | |
| Number of Bits per Word | 8bit | |
| Number of Words | 512 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Memory Size 4kbit | ||
Organisation 512 x 8 | ||
Interface Type I2C | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 10ns | ||
Mounting Type Surface Mount | ||
Package Type SOIC | ||
Pin Count 8 | ||
Dimensions 4.97 x 3.98 x 1.48mm | ||
Length 4.97mm | ||
Maximum Operating Supply Voltage 5.5 V | ||
Width 3.98mm | ||
Height 1.48mm | ||
Maximum Operating Temperature +85 °C | ||
Automotive Standard AEC-Q100 | ||
Minimum Operating Temperature -40 °C | ||
Minimum Operating Supply Voltage 4.5 V | ||
Number of Bits per Word 8bit | ||
Number of Words 512 | ||
The Cypress Semiconductor FM24C04B is a 4-Kbit non-volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is non-volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other non-volatile memories.
4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 x 8
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process