A ferroelectric random access memory or F-RAM is nonvolatile, which means that data is retained after power is removed. It provides data retention for over 151 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and high write endurance make the F-RAM superior to other types of memory. The FM22LD16 operation is similar to that of other RAM devices and therefore, it can be used as a drop-in replacement for a standard SRAM in a system. Read and write cycles may be triggered by CE or simply by changing the address. The F-RAM memory is nonvolatile due to its unique ferroelectric memory process. These features make the FM22LD16 ideal for nonvolatile memory applications requiring frequent or rapid writes. The FM22LD16 includes a low voltage monitor that blocks access to the memory array when VDD drops below VDD min. The memory is protected against an inadvertent access and data corruption under this condition.