Infineon 64kbit I2C FRAM Memory 8-Pin SOIC, FM24C64B-G
- RS Stock No.:
- 188-5397
- Mfr. Part No.:
- FM24C64B-G
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 97 units)*
£234.74
(exc. VAT)
£281.30
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 1,843 unit(s) ready to ship
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Units | Per unit | Per Tube* |
|---|---|---|
| 97 - 97 | £2.42 | £234.74 |
| 194 - 485 | £2.173 | £210.78 |
| 582 - 970 | £2.081 | £201.86 |
| 1067 + | £1.967 | £190.80 |
*price indicative
- RS Stock No.:
- 188-5397
- Mfr. Part No.:
- FM24C64B-G
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Memory Size | 64kbit | |
| Organisation | 8K x 8 bit | |
| Interface Type | I2C | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 550ns | |
| Mounting Type | Surface Mount | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Dimensions | 4.97 x 3.98 x 1.48mm | |
| Length | 4.97mm | |
| Width | 3.98mm | |
| Maximum Operating Supply Voltage | 5.5 V | |
| Height | 1.48mm | |
| Maximum Operating Temperature | +85 °C | |
| Automotive Standard | AEC-Q100 | |
| Number of Bits per Word | 8bit | |
| Minimum Operating Supply Voltage | 4.5 V | |
| Minimum Operating Temperature | -40 °C | |
| Number of Words | 8k | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Memory Size 64kbit | ||
Organisation 8K x 8 bit | ||
Interface Type I2C | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 550ns | ||
Mounting Type Surface Mount | ||
Package Type SOIC | ||
Pin Count 8 | ||
Dimensions 4.97 x 3.98 x 1.48mm | ||
Length 4.97mm | ||
Width 3.98mm | ||
Maximum Operating Supply Voltage 5.5 V | ||
Height 1.48mm | ||
Maximum Operating Temperature +85 °C | ||
Automotive Standard AEC-Q100 | ||
Number of Bits per Word 8bit | ||
Minimum Operating Supply Voltage 4.5 V | ||
Minimum Operating Temperature -40 °C | ||
Number of Words 8k | ||
- COO (Country of Origin):
- US
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
Fast write speed
High endurance
Low power consumption
64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8K x 8
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
Fast 2-wire Serial interface (I2C)
Up to 1-MHz frequency
Direct hardware replacement for serial (I2C) EEPROM
Supports legacy timings for 100 kHz and 400 kHz
Low power consumption
100 μA (typ) active current at 100 kHz
4 μA (typ) standby current
Voltage operation: VDD = 4.5 V to 5.5 V
Industrial temperature: –40 °C to +85 °C
8-pin small outline integrated circuit (SOIC) package
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
Fast 2-wire Serial interface (I2C)
Up to 1-MHz frequency
Direct hardware replacement for serial (I2C) EEPROM
Supports legacy timings for 100 kHz and 400 kHz
Low power consumption
100 μA (typ) active current at 100 kHz
4 μA (typ) standby current
Voltage operation: VDD = 4.5 V to 5.5 V
Industrial temperature: –40 °C to +85 °C
8-pin small outline integrated circuit (SOIC) package
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.