Infineon 256kbit Parallel FRAM Memory 28-Pin SOIC, FM28V020-SG
- RS Stock No.:
- 125-4229P
- Mfr. Part No.:
- FM28V020-SG
- Brand:
- Infineon
Bulk discount available
Subtotal 10 units (supplied in a tube)*
£84.20
(exc. VAT)
£101.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 284 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 10 - 49 | £8.42 |
| 50 - 99 | £8.20 |
| 100 - 499 | £7.96 |
| 500 + | £7.79 |
*price indicative
- RS Stock No.:
- 125-4229P
- Mfr. Part No.:
- FM28V020-SG
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Memory Size | 256kbit | |
| Organisation | 32K x 8 bit | |
| Interface Type | Parallel | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 70ns | |
| Mounting Type | Surface Mount | |
| Package Type | SOIC | |
| Pin Count | 28 | |
| Dimensions | 18.11 x 7.62 x 2.37mm | |
| Length | 18.11mm | |
| Maximum Operating Supply Voltage | 3.6 V | |
| Width | 7.62mm | |
| Height | 2.37mm | |
| Maximum Operating Temperature | +85 °C | |
| Minimum Operating Temperature | -40 °C | |
| Number of Bits per Word | 8bit | |
| Minimum Operating Supply Voltage | 2 V | |
| Number of Words | 32K | |
| Automotive Standard | AEC-Q100 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Memory Size 256kbit | ||
Organisation 32K x 8 bit | ||
Interface Type Parallel | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 70ns | ||
Mounting Type Surface Mount | ||
Package Type SOIC | ||
Pin Count 28 | ||
Dimensions 18.11 x 7.62 x 2.37mm | ||
Length 18.11mm | ||
Maximum Operating Supply Voltage 3.6 V | ||
Width 7.62mm | ||
Height 2.37mm | ||
Maximum Operating Temperature +85 °C | ||
Minimum Operating Temperature -40 °C | ||
Number of Bits per Word 8bit | ||
Minimum Operating Supply Voltage 2 V | ||
Number of Words 32K | ||
Automotive Standard AEC-Q100 | ||
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
Fast write speed
High endurance
Low power consumption
256-Kbit ferroelectric random access memory (F-RAM) logically organized as 32K x 8
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Page mode operation
Advanced high-reliability ferroelectric process
SRAM compatible
Industry-standard 32K x 8 SRAM pinout
70-ns access time, 140-ns cycle time
Superior to battery-backed SRAM modules
No battery concerns
Monolithic reliability
True surface mount solution, no rework steps
Superior for moisture, shock, and vibration
Resistant to negative voltage undershoots
Low power consumption
Active current 5 mA (typ)
Standby current 90 μA (typ)
Low-voltage operation: VDD = 2.0 V to 3.6 V
Industrial temperature: –40 °C to +85 °C
Packages:
28-pin small outline integrated circuit (SOIC) package
28-pin thin small outline package (TSOP) Type I
32-pin thin small outline package (TSOP) Type I
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Page mode operation
Advanced high-reliability ferroelectric process
SRAM compatible
Industry-standard 32K x 8 SRAM pinout
70-ns access time, 140-ns cycle time
Superior to battery-backed SRAM modules
No battery concerns
Monolithic reliability
True surface mount solution, no rework steps
Superior for moisture, shock, and vibration
Resistant to negative voltage undershoots
Low power consumption
Active current 5 mA (typ)
Standby current 90 μA (typ)
Low-voltage operation: VDD = 2.0 V to 3.6 V
Industrial temperature: –40 °C to +85 °C
Packages:
28-pin small outline integrated circuit (SOIC) package
28-pin thin small outline package (TSOP) Type I
32-pin thin small outline package (TSOP) Type I
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.