Infineon 256kbit Serial-2 Wire, Serial-I2C FRAM Memory 8-Pin SOIC, FM24W256-G
- RS Stock No.:
- 125-4217P
- Mfr. Part No.:
- FM24W256-G
- Brand:
- Infineon
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Subtotal 10 units (supplied in a tube)*
£39.40
(exc. VAT)
£47.30
(inc. VAT)
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In Stock
- 1,411 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 10 - 49 | £3.94 |
| 50 - 99 | £3.84 |
| 100 - 499 | £3.61 |
| 500 + | £3.52 |
*price indicative
- RS Stock No.:
- 125-4217P
- Mfr. Part No.:
- FM24W256-G
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Memory Size | 256kbit | |
| Organisation | 32K x 8 bit | |
| Interface Type | Serial-2 Wire, Serial-I2C | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 3000ns | |
| Mounting Type | Surface Mount | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Dimensions | 4.97 x 3.98 x 1.48mm | |
| Length | 4.97mm | |
| Maximum Operating Supply Voltage | 5.5 V | |
| Width | 3.98mm | |
| Height | 1.48mm | |
| Maximum Operating Temperature | +85 °C | |
| Minimum Operating Supply Voltage | 2.7 V | |
| Minimum Operating Temperature | -40 °C | |
| Number of Words | 32K | |
| Automotive Standard | AEC-Q100 | |
| Number of Bits per Word | 8bit | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Memory Size 256kbit | ||
Organisation 32K x 8 bit | ||
Interface Type Serial-2 Wire, Serial-I2C | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 3000ns | ||
Mounting Type Surface Mount | ||
Package Type SOIC | ||
Pin Count 8 | ||
Dimensions 4.97 x 3.98 x 1.48mm | ||
Length 4.97mm | ||
Maximum Operating Supply Voltage 5.5 V | ||
Width 3.98mm | ||
Height 1.48mm | ||
Maximum Operating Temperature +85 °C | ||
Minimum Operating Supply Voltage 2.7 V | ||
Minimum Operating Temperature -40 °C | ||
Number of Words 32K | ||
Automotive Standard AEC-Q100 | ||
Number of Bits per Word 8bit | ||
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
Fast write speed
High endurance
Low power consumption
256-Kbit ferroelectric random access memory (F-RAM) logically organized as 32K x 8
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
Fast 2-wire Serial interface (I2C)
Up to 1-MHz frequency
Direct hardware replacement for serial (I2C) EEPROM
Supports legacy timings for 100 kHz and 400 kHz
Low power consumption
100 μA active current at 100 kHz
15 μA (typ) standby current
Wide voltage operation: VDD = 2.7 V to 5.5 V
Industrial temperature: –40 °C to +85 °C
8-pin small outline integrated circuit (SOIC) package
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
Fast 2-wire Serial interface (I2C)
Up to 1-MHz frequency
Direct hardware replacement for serial (I2C) EEPROM
Supports legacy timings for 100 kHz and 400 kHz
Low power consumption
100 μA active current at 100 kHz
15 μA (typ) standby current
Wide voltage operation: VDD = 2.7 V to 5.5 V
Industrial temperature: –40 °C to +85 °C
8-pin small outline integrated circuit (SOIC) package
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.