Infineon 16kbit Serial-2 Wire, Serial-I2C FRAM Memory 8-Pin DFN, FM24CL16B-DG
- RS Stock No.:
- 125-4211P
- Mfr. Part No.:
- FM24CL16B-DG
- Brand:
- Infineon
1615 In stock - FREE next working day delivery available
Price Each (Supplied in a Tube)
£1.262
(exc. VAT)
£1.514
(inc. VAT)
| Units | Per unit |
| 5 + | £1.262 |
- RS Stock No.:
- 125-4211P
- Mfr. Part No.:
- FM24CL16B-DG
- Brand:
- Infineon
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
Fast write speed
High endurance
Low power consumption
16-Kbit ferroelectric random access memory (F-RAM) logically organized as 2K x 8
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
Fast 2-wire Serial interface (I2C)
Up to 1-MHz frequency
Direct hardware replacement for serial (I2C) EEPROM
Supports legacy timings for 100 kHz and 400 kHz
Low power consumption
100 μA active current at 100 kHz
3 μA (typ) standby current
Voltage operation: VDD = 2.7 V to 3.65 V
Industrial temperature: –40 °C to +85 °C
Packages
8-pin small outline integrated circuit (SOIC) package
8-pin dual flat no leads (DFN) package
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
Fast 2-wire Serial interface (I2C)
Up to 1-MHz frequency
Direct hardware replacement for serial (I2C) EEPROM
Supports legacy timings for 100 kHz and 400 kHz
Low power consumption
100 μA active current at 100 kHz
3 μA (typ) standby current
Voltage operation: VDD = 2.7 V to 3.65 V
Industrial temperature: –40 °C to +85 °C
Packages
8-pin small outline integrated circuit (SOIC) package
8-pin dual flat no leads (DFN) package
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
Attribute | Value |
|---|---|
| Memory Size | 16kbit |
| Organisation | 2K x 8 bit |
| Interface Type | Serial-2 Wire, Serial-I2C |
| Data Bus Width | 8bit |
| Maximum Random Access Time | 3000ns |
| Mounting Type | Surface Mount |
| Package Type | DFN |
| Pin Count | 8 |
| Dimensions | 4 x 4.5 x 0.7mm |
| Length | 4.5mm |
| Width | 4mm |
| Maximum Operating Supply Voltage | 3.65 V |
| Height | 0.7mm |
| Maximum Operating Temperature | +85 °C |
| Minimum Operating Temperature | -40 °C |
| Number of Words | 2K |
| Number of Bits per Word | 8bit |
| Automotive Standard | AEC-Q100 |
| Minimum Operating Supply Voltage | 2.7 V |
- RS Stock No.:
- 125-4211P
- Mfr. Part No.:
- FM24CL16B-DG
- Brand:
- Infineon
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
Fast write speed
High endurance
Low power consumption
16-Kbit ferroelectric random access memory (F-RAM) logically organized as 2K x 8
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
Fast 2-wire Serial interface (I2C)
Up to 1-MHz frequency
Direct hardware replacement for serial (I2C) EEPROM
Supports legacy timings for 100 kHz and 400 kHz
Low power consumption
100 μA active current at 100 kHz
3 μA (typ) standby current
Voltage operation: VDD = 2.7 V to 3.65 V
Industrial temperature: –40 °C to +85 °C
Packages
8-pin small outline integrated circuit (SOIC) package
8-pin dual flat no leads (DFN) package
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
Fast 2-wire Serial interface (I2C)
Up to 1-MHz frequency
Direct hardware replacement for serial (I2C) EEPROM
Supports legacy timings for 100 kHz and 400 kHz
Low power consumption
100 μA active current at 100 kHz
3 μA (typ) standby current
Voltage operation: VDD = 2.7 V to 3.65 V
Industrial temperature: –40 °C to +85 °C
Packages
8-pin small outline integrated circuit (SOIC) package
8-pin dual flat no leads (DFN) package
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
Attribute | Value |
|---|---|
| Memory Size | 16kbit |
| Organisation | 2K x 8 bit |
| Interface Type | Serial-2 Wire, Serial-I2C |
| Data Bus Width | 8bit |
| Maximum Random Access Time | 3000ns |
| Mounting Type | Surface Mount |
| Package Type | DFN |
| Pin Count | 8 |
| Dimensions | 4 x 4.5 x 0.7mm |
| Length | 4.5mm |
| Width | 4mm |
| Maximum Operating Supply Voltage | 3.65 V |
| Height | 0.7mm |
| Maximum Operating Temperature | +85 °C |
| Minimum Operating Temperature | -40 °C |
| Number of Words | 2K |
| Number of Bits per Word | 8bit |
| Automotive Standard | AEC-Q100 |
| Minimum Operating Supply Voltage | 2.7 V |