Cypress Semiconductor 16kbit Serial-2 Wire, Serial-I2C FRAM Memory 8-Pin SOIC, FM24C16B-G
- RS Stock No.:
- 125-4208P
- Mfr. Part No.:
- FM24C16B-G
- Brand:
- Cypress Semiconductor
Discontinued
- RS Stock No.:
- 125-4208P
- Mfr. Part No.:
- FM24C16B-G
- Brand:
- Cypress Semiconductor
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Cypress Semiconductor | |
| Memory Size | 16kbit | |
| Organisation | 2K x 8 bit | |
| Interface Type | Serial-2 Wire, Serial-I2C | |
| Mounting Type | Surface Mount | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Dimensions | 4.97 x 3.98 x 1.48mm | |
| Maximum Operating Supply Voltage | 5.5 V | |
| Maximum Operating Temperature | +85 °C | |
| Number of Words | 2K | |
| Minimum Operating Temperature | -40 °C | |
| Minimum Operating Supply Voltage | 4.5 V | |
| Number of Bits per Word | 8bit | |
| Select all | ||
|---|---|---|
Brand Cypress Semiconductor | ||
Memory Size 16kbit | ||
Organisation 2K x 8 bit | ||
Interface Type Serial-2 Wire, Serial-I2C | ||
Mounting Type Surface Mount | ||
Package Type SOIC | ||
Pin Count 8 | ||
Dimensions 4.97 x 3.98 x 1.48mm | ||
Maximum Operating Supply Voltage 5.5 V | ||
Maximum Operating Temperature +85 °C | ||
Number of Words 2K | ||
Minimum Operating Temperature -40 °C | ||
Minimum Operating Supply Voltage 4.5 V | ||
Number of Bits per Word 8bit | ||
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
Fast write speed
High endurance
Low power consumption
16-Kbit ferroelectric random access memory (F-RAM) logically organized as 2K x 8
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
Fast 2-wire Serial interface (I2C)
Up to 1-MHz frequency
Direct hardware replacement for serial (I2C) EEPROM
Supports legacy timings for 100 kHz and 400 kHz
Low power consumption
100 μA active current at 100 kHz
4 μA (typ) standby current
Voltage operation: VDD = 4.5 V to 5.5 V
Industrial temperature: –40 °C to +85 °C
8-pin small outline integrated circuit (SOIC) package
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
Fast 2-wire Serial interface (I2C)
Up to 1-MHz frequency
Direct hardware replacement for serial (I2C) EEPROM
Supports legacy timings for 100 kHz and 400 kHz
Low power consumption
100 μA active current at 100 kHz
4 μA (typ) standby current
Voltage operation: VDD = 4.5 V to 5.5 V
Industrial temperature: –40 °C to +85 °C
8-pin small outline integrated circuit (SOIC) package
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.