Infineon 2Mbit Parallel FRAM Memory 44-Pin TSOP, FM28V202A-TG
- RS Stock No.:
- 124-2992
- Mfr. Part No.:
- FM28V202A-TG
- Brand:
- Cypress Semiconductor
Discontinued product
- RS Stock No.:
- 124-2992
- Mfr. Part No.:
- FM28V202A-TG
- Brand:
- Cypress Semiconductor
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
Fast write speed
High endurance
Low power consumption
2-Mbit ferroelectric random access memory (F-RAM) logically organized as 128 K x 16
Configurable as 256 K x 8 using UB and LB
High-endurance 100 trillion (1014) read/writes
151-year data retention (see the Data Retention and Endurance table)
NoDelay™ writes
Page mode operation to 30-ns cycle time
Advanced high-reliability ferroelectric process
SRAM compatible
Industry-standard 128 K x 16 SRAM pinout
60-ns access time, 90-ns cycle time
Advanced features
Software-programmable block write-protect
Superior to battery-backed SRAM modules
No battery concerns
Monolithic reliability
True surface mount solution, no rework steps
Superior for moisture, shock, and vibration
Low power consumption
Active current 7 mA (typ)
Standby current 120 μA (typ)
Low-voltage operation: VDD = 2.0 V to 3.6 V
Industrial temperature: –40 °C to +85 °C
44-pin thin small outline package (TSOP) Type II
Configurable as 256 K x 8 using UB and LB
High-endurance 100 trillion (1014) read/writes
151-year data retention (see the Data Retention and Endurance table)
NoDelay™ writes
Page mode operation to 30-ns cycle time
Advanced high-reliability ferroelectric process
SRAM compatible
Industry-standard 128 K x 16 SRAM pinout
60-ns access time, 90-ns cycle time
Advanced features
Software-programmable block write-protect
Superior to battery-backed SRAM modules
No battery concerns
Monolithic reliability
True surface mount solution, no rework steps
Superior for moisture, shock, and vibration
Low power consumption
Active current 7 mA (typ)
Standby current 120 μA (typ)
Low-voltage operation: VDD = 2.0 V to 3.6 V
Industrial temperature: –40 °C to +85 °C
44-pin thin small outline package (TSOP) Type II
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
Attribute | Value |
---|---|
Memory Size | 2Mbit |
Organisation | 128K x 16 bit |
Interface Type | Parallel |
Data Bus Width | 16bit |
Maximum Random Access Time | 60ns |
Mounting Type | Surface Mount |
Package Type | TSOP |
Pin Count | 44 |
Dimensions | 18.51 x 10.26 x 1.04mm |
Maximum Operating Supply Voltage | 3.6 V |
Maximum Operating Temperature | +85 °C |
Number of Bits per Word | 16bit |
Minimum Operating Supply Voltage | 2 V |
Number of Words | 128K |
Minimum Operating Temperature | -40 °C |