Infineon 1Mbit SPI FRAM Memory 8-Pin SOIC, FM25VN10-G
- RS Stock No.:
- 124-2991P
- Mfr. Part No.:
- FM25VN10-G
- Brand:
- Infineon
Subtotal 1 unit (supplied in a tube)*
£9.82
(exc. VAT)
£11.78
(inc. VAT)
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In Stock
- 372 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 1 + | £9.82 |
*price indicative
- RS Stock No.:
- 124-2991P
- Mfr. Part No.:
- FM25VN10-G
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Memory Size | 1Mbit | |
| Organisation | 128K x 8 bit | |
| Interface Type | SPI | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 18ns | |
| Mounting Type | Surface Mount | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Dimensions | 4.97 x 3.98 x 1.47mm | |
| Length | 4.97mm | |
| Width | 3.98mm | |
| Maximum Operating Supply Voltage | 3.6 V | |
| Height | 1.47mm | |
| Maximum Operating Temperature | +85 °C | |
| Number of Bits per Word | 8bit | |
| Minimum Operating Supply Voltage | 2 V | |
| Number of Words | 128K | |
| Minimum Operating Temperature | -40 °C | |
| Automotive Standard | AEC-Q100 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Memory Size 1Mbit | ||
Organisation 128K x 8 bit | ||
Interface Type SPI | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 18ns | ||
Mounting Type Surface Mount | ||
Package Type SOIC | ||
Pin Count 8 | ||
Dimensions 4.97 x 3.98 x 1.47mm | ||
Length 4.97mm | ||
Width 3.98mm | ||
Maximum Operating Supply Voltage 3.6 V | ||
Height 1.47mm | ||
Maximum Operating Temperature +85 °C | ||
Number of Bits per Word 8bit | ||
Minimum Operating Supply Voltage 2 V | ||
Number of Words 128K | ||
Minimum Operating Temperature -40 °C | ||
Automotive Standard AEC-Q100 | ||
- COO (Country of Origin):
- US
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
Fast write speed
High endurance
Low power consumption
1-Mbit ferroelectric random access memory (F-RAM) logically organized as 128K x 8
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
Very fast serial peripheral interface (SPI)
Up to 40-MHz frequency
Direct hardware replacement for serial flash and EEPROM
Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
Sophisticated write protection scheme
Hardware protection using the Write Protect (WP) pin
Software protection using Write Disable instruction
Software block protection for 1/4, 1/2, or entire array
Device ID and Serial Number
Manufacturer ID and Product ID
Unique Serial Number (FM25VN10)
Low power consumption
300 μA active current at 1 MHz
90 μA (typ) standby current
5 μA sleep mode current
Low-voltage operation: VDD = 2.0 V to 3.6 V
Industrial temperature: –40 °C to +85 °C
Packages
8-pin small outline integrated circuit (SOIC) package
8-pin dual flat no-leads (DFN) package
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
Very fast serial peripheral interface (SPI)
Up to 40-MHz frequency
Direct hardware replacement for serial flash and EEPROM
Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
Sophisticated write protection scheme
Hardware protection using the Write Protect (WP) pin
Software protection using Write Disable instruction
Software block protection for 1/4, 1/2, or entire array
Device ID and Serial Number
Manufacturer ID and Product ID
Unique Serial Number (FM25VN10)
Low power consumption
300 μA active current at 1 MHz
90 μA (typ) standby current
5 μA sleep mode current
Low-voltage operation: VDD = 2.0 V to 3.6 V
Industrial temperature: –40 °C to +85 °C
Packages
8-pin small outline integrated circuit (SOIC) package
8-pin dual flat no-leads (DFN) package
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.