Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory Fast write speed High endurance Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
Attribute
Value
Memory Size
4Mbit
Organisation
256K x 16 bit
Interface Type
Parallel
Data Bus Width
16bit
Maximum Random Access Time
55ns
Mounting Type
Surface Mount
Package Type
TSOP
Pin Count
44
Dimensions
18.41 x 10.16 x 1.05mm
Length
18.41mm
Width
10.16mm
Maximum Operating Supply Voltage
3.6 V
Height
1.05mm
Maximum Operating Temperature
+85 °C
Minimum Operating Supply Voltage
2.7 V
Minimum Operating Temperature
-40 °C
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