Infineon NOR 256Mbit CFI Flash Memory 64-Pin BGA, S29GL256P11FFIV20
- RS Stock No.:
- 193-8867P
- Mfr. Part No.:
- S29GL256P11FFIV20
- Brand:
- Infineon
Subtotal 2 units (supplied in a tray)*
£12.25
(exc. VAT)
£14.70
(inc. VAT)
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- 999,999,998 unit(s) shipping from 22 October 2026
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Units | Per unit |
---|---|
2 + | £6.125 |
*price indicative
- RS Stock No.:
- 193-8867P
- Mfr. Part No.:
- S29GL256P11FFIV20
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Memory Size | 256Mbit | |
Interface Type | CFI | |
Package Type | BGA | |
Pin Count | 64 | |
Organisation | 32M x 8 bit | |
Mounting Type | Surface Mount | |
Cell Type | NOR | |
Minimum Operating Supply Voltage | 2.7 V | |
Maximum Operating Supply Voltage | 3.6 V | |
Block Organisation | Symmetrical | |
Length | 13mm | |
Height | 1mm | |
Width | 11mm | |
Dimensions | 13 x 11 x 1mm | |
Number of Words | 32M | |
Series | S29GL | |
Number of Bits per Word | 8bit | |
Maximum Random Access Time | 110ns | |
Maximum Operating Temperature | +85 °C | |
Minimum Operating Temperature | -40 °C | |
Select all | ||
---|---|---|
Brand Infineon | ||
Memory Size 256Mbit | ||
Interface Type CFI | ||
Package Type BGA | ||
Pin Count 64 | ||
Organisation 32M x 8 bit | ||
Mounting Type Surface Mount | ||
Cell Type NOR | ||
Minimum Operating Supply Voltage 2.7 V | ||
Maximum Operating Supply Voltage 3.6 V | ||
Block Organisation Symmetrical | ||
Length 13mm | ||
Height 1mm | ||
Width 11mm | ||
Dimensions 13 x 11 x 1mm | ||
Number of Words 32M | ||
Series S29GL | ||
Number of Bits per Word 8bit | ||
Maximum Random Access Time 110ns | ||
Maximum Operating Temperature +85 °C | ||
Minimum Operating Temperature -40 °C | ||
- COO (Country of Origin):
- US
The Cypress S29GL01G/512/256/128P are Mirrorbit® Flash products fabricated on 90 nm process technology. These devices offer a fast page access time of 25 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for todays embedded applications that require higher density, better performance and lower power consumption.