- RS Stock No.:
- 188-2549
- Mfr. Part No.:
- W29N01HVBINA
- Brand:
- Winbond
View all Flash Memory
210 In stock - FREE next working day delivery available
Price Each (In a Tray of 210)
£2.696
(exc. VAT)
£3.235
(inc. VAT)
Units | Per unit | Per Tray* |
210 + | £2.696 | £566.16 |
*price indicative |
- RS Stock No.:
- 188-2549
- Mfr. Part No.:
- W29N01HVBINA
- Brand:
- Winbond
Technical Reference
Legislation and Compliance
Product Details
Density : 1Gbit (Single chip solution)
Vcc : 2.7V to 3.6V
Bus width : x8
Operating temperature
Industrial: -40°C to 85°C
Single-Level Cell (SLC) technology.
Organization
Density: 1G-bit/128M-byte
Page size
2,112 bytes (2048 + 64 bytes)
Block size
64 pages (128K + 4K bytes)
Highest Performance
Read performance (Max.)
Random read: 25us
Sequential read cycle: 25ns
Write Erase performance
Page program time: 250us(typ.)
Block erase time: 2ms(typ.)
Endurance 100,000 Erase/Program Cycles(1)
10-years data retention
Command set
Standard NAND command set
Additional command support
Copy Back
Lowest power consumption
Read: 25mA(typ.3V),
Program/Erase: 25mA(typ.3V),
CMOS standby: 10uA(typ.)
Space Efficient Packaging
48-pin standard TSOP1
48-ball VFBGA
63-ball VFBGA
Vcc : 2.7V to 3.6V
Bus width : x8
Operating temperature
Industrial: -40°C to 85°C
Single-Level Cell (SLC) technology.
Organization
Density: 1G-bit/128M-byte
Page size
2,112 bytes (2048 + 64 bytes)
Block size
64 pages (128K + 4K bytes)
Highest Performance
Read performance (Max.)
Random read: 25us
Sequential read cycle: 25ns
Write Erase performance
Page program time: 250us(typ.)
Block erase time: 2ms(typ.)
Endurance 100,000 Erase/Program Cycles(1)
10-years data retention
Command set
Standard NAND command set
Additional command support
Copy Back
Lowest power consumption
Read: 25mA(typ.3V),
Program/Erase: 25mA(typ.3V),
CMOS standby: 10uA(typ.)
Space Efficient Packaging
48-pin standard TSOP1
48-ball VFBGA
63-ball VFBGA
1Gb SLC NAND Flash Memory with uniform 2KB+64B page size.
Bus Width: x8
Random Read: 25us
Page Program Time: 250us(typ.)
Block Erase Time: 2ms(typ.)
Random Read: 25us
Page Program Time: 250us(typ.)
Block Erase Time: 2ms(typ.)
Specifications
Attribute | Value |
Memory Size | 1Gbit |
Interface Type | Parallel |
Package Type | VFBGA |
Pin Count | 63 |
Organisation | 128M x 8 bit |
Mounting Type | Surface Mount |
Cell Type | SLC NAND |
Minimum Operating Supply Voltage | 2.7 V |
Maximum Operating Supply Voltage | 3.6 V |
Block Organisation | Symmetrical |
Length | 11.1mm |
Height | 0.6mm |
Width | 9.1mm |
Dimensions | 11.1 x 9.1 x 0.6mm |
Number of Bits per Word | 8bit |
Maximum Random Access Time | 25µs |
Series | W29N |
Minimum Operating Temperature | -40 °C |
Number of Words | 128M |
Maximum Operating Temperature | +85 °C |