Infineon NOR 128Mbit Quad-SPI Flash Memory 8-Pin WSON, S25FL128LAGNFI010
- RS Stock No.:
- 181-1593P
- Mfr. Part No.:
- S25FL128LAGNFI010
- Brand:
- Infineon
Bulk discount available
Subtotal 30 units (supplied in a tray)*
£51.81
(exc. VAT)
£62.16
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 327 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 30 - 72 | £1.727 |
| 75 - 147 | £1.577 |
| 150 - 297 | £1.463 |
| 300 + | £1.337 |
*price indicative
- RS Stock No.:
- 181-1593P
- Mfr. Part No.:
- S25FL128LAGNFI010
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Memory Size | 128Mbit | |
| Interface Type | Quad-SPI | |
| Package Type | WSON | |
| Pin Count | 8 | |
| Organisation | 16M x 8 bit | |
| Mounting Type | Surface Mount | |
| Cell Type | NOR | |
| Minimum Operating Supply Voltage | 2.7 V | |
| Maximum Operating Supply Voltage | 3.6 V | |
| Block Organisation | Symmetrical | |
| Length | 5.28mm | |
| Height | 1.9mm | |
| Width | 5.28mm | |
| Dimensions | 5.28 x 5.28 x 1.9mm | |
| Maximum Operating Temperature | +85 °C | |
| Automotive Standard | AEC-Q100 | |
| Number of Bits per Word | 8bit | |
| Minimum Operating Temperature | -40 °C | |
| Number of Words | 16M | |
| Series | S25FL | |
| Maximum Random Access Time | 8ns | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Memory Size 128Mbit | ||
Interface Type Quad-SPI | ||
Package Type WSON | ||
Pin Count 8 | ||
Organisation 16M x 8 bit | ||
Mounting Type Surface Mount | ||
Cell Type NOR | ||
Minimum Operating Supply Voltage 2.7 V | ||
Maximum Operating Supply Voltage 3.6 V | ||
Block Organisation Symmetrical | ||
Length 5.28mm | ||
Height 1.9mm | ||
Width 5.28mm | ||
Dimensions 5.28 x 5.28 x 1.9mm | ||
Maximum Operating Temperature +85 °C | ||
Automotive Standard AEC-Q100 | ||
Number of Bits per Word 8bit | ||
Minimum Operating Temperature -40 °C | ||
Number of Words 16M | ||
Series S25FL | ||
Maximum Random Access Time 8ns | ||
2-Mbit ferroelectric random access memory (F-RAM) logically
organized as 256 K ´ 8
High-endurance 10 trillion (1014) read/writes
121-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
Very fast serial peripheral interface (SPI)
Up to 33 MHz frequency
Direct hardware replacement for serial flash and EEPROM
Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
Sophisticated write protection scheme
Hardware protection using the Write Protect (WP) pin
Software protection using Write Disable instruction
Software block protection for 1/4, 1/2, or entire array
Device ID
Manufacturer ID and Product ID
Low power consumption
3 mA active current at 33 MHz
400 A standby current
12 A sleep mode current
Low-voltage operation: VDD = 2.0 V to 3.6 V
Extended temperature: –40 °C to +105 °C
8-pin thin dual flat no leads (DFN) package
organized as 256 K ´ 8
High-endurance 10 trillion (1014) read/writes
121-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
Very fast serial peripheral interface (SPI)
Up to 33 MHz frequency
Direct hardware replacement for serial flash and EEPROM
Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
Sophisticated write protection scheme
Hardware protection using the Write Protect (WP) pin
Software protection using Write Disable instruction
Software block protection for 1/4, 1/2, or entire array
Device ID
Manufacturer ID and Product ID
Low power consumption
3 mA active current at 33 MHz
400 A standby current
12 A sleep mode current
Low-voltage operation: VDD = 2.0 V to 3.6 V
Extended temperature: –40 °C to +105 °C
8-pin thin dual flat no leads (DFN) package