Microchip AT28HC256-12JU, 256kbit Parallel EEPROM Memory, 120ns 32-Pin PLCC Parallel
- RS Stock No.:
- 177-1707P
- Mfr. Part No.:
- AT28HC256-12JU
- Brand:
- Microchip
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Subtotal 25 units (supplied in a tube)*
£240.75
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£289.00
(inc. VAT)
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In Stock
- 18 unit(s) ready to ship
- Plus 999,999,981 unit(s) shipping from 10 November 2025
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Units | Per unit |
|---|---|
| 25 - 99 | £9.63 |
| 100 + | £9.29 |
*price indicative
- RS Stock No.:
- 177-1707P
- Mfr. Part No.:
- AT28HC256-12JU
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Memory Size | 256kbit | |
| Interface Type | Parallel | |
| Package Type | PLCC | |
| Mounting Type | Surface Mount | |
| Pin Count | 32 | |
| Organisation | 32K x 8 bit | |
| Minimum Operating Supply Voltage | 4.5 V | |
| Maximum Operating Supply Voltage | 5.5 V | |
| Programming Voltage | 4.5 → 5.5V | |
| Number of Bits per Word | 8bit | |
| Dimensions | 11.5 x 14.04 x 3.17mm | |
| Minimum Operating Temperature | -40 °C | |
| Maximum Operating Temperature | +85 °C | |
| Maximum Random Access Time | 120ns | |
| Data Retention | 10yr | |
| Number of Words | 32K | |
Select all | ||
|---|---|---|
Brand Microchip | ||
Memory Size 256kbit | ||
Interface Type Parallel | ||
Package Type PLCC | ||
Mounting Type Surface Mount | ||
Pin Count 32 | ||
Organisation 32K x 8 bit | ||
Minimum Operating Supply Voltage 4.5 V | ||
Maximum Operating Supply Voltage 5.5 V | ||
Programming Voltage 4.5 → 5.5V | ||
Number of Bits per Word 8bit | ||
Dimensions 11.5 x 14.04 x 3.17mm | ||
Minimum Operating Temperature -40 °C | ||
Maximum Operating Temperature +85 °C | ||
Maximum Random Access Time 120ns | ||
Data Retention 10yr | ||
Number of Words 32K | ||
- COO (Country of Origin):
- TW
The Microchip AT28HC256 is a high-performance 256Kbit Parallel EEPROM available in both Industrial and Military temp ranges, offering access times to 70ns with power dissipation of 440mW. Deselected, CMOS standby current is less than 5mA. Accessed like static RAM for the read or write cycle without external components, it contains a 64-byte page register to allow writing of up to 64 bytes simultaneously. Features an internal Error Correction Circuit for extended endurance and improved data retention, in Military version. Optional Software Data Protection mechanism guards against inadvertent writes, and an extra 64 bytes of EEPROM enables device identification or tracking.
Additional Features:
32 Kbits x 8 (256 Kbit)
5V ± 10% Supply
Parallel Interface
150ns access time
self-Timed Erase and Write Cycles (10 ms max)
Page Write and Byte Write
Data Polling for end of write detection
Low Power Consumption:
Read / Write current 40 mA (Max)
Standby current TTL 2 mA (Max), CMOS 200 μA (Max)
32 Kbits x 8 (256 Kbit)
5V ± 10% Supply
Parallel Interface
150ns access time
self-Timed Erase and Write Cycles (10 ms max)
Page Write and Byte Write
Data Polling for end of write detection
Low Power Consumption:
Read / Write current 40 mA (Max)
Standby current TTL 2 mA (Max), CMOS 200 μA (Max)