Cypress Semiconductor 256kbit Parallel FRAM Memory 32-Pin TSOP, FM28V020-TG
- RS Stock No.:
- 828-2831
- Mfr. Part No.:
- FM28V020-TG
- Brand:
- Cypress Semiconductor
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 828-2831
- Mfr. Part No.:
- FM28V020-TG
- Brand:
- Cypress Semiconductor
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Cypress Semiconductor | |
| Memory Size | 256kbit | |
| Organisation | 32K x 8 bit | |
| Interface Type | Parallel | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 70ns | |
| Mounting Type | Surface Mount | |
| Package Type | TSOP | |
| Pin Count | 32 | |
| Dimensions | 11.9 x 8.1 x 1.02mm | |
| Length | 11.9mm | |
| Width | 8.1mm | |
| Maximum Operating Supply Voltage | 3.6 V | |
| Height | 1.02mm | |
| Maximum Operating Temperature | +85 °C | |
| Number of Bits per Word | 8bit | |
| Minimum Operating Supply Voltage | 2 V | |
| Number of Words | 32K | |
| Minimum Operating Temperature | -40 °C | |
| Select all | ||
|---|---|---|
Brand Cypress Semiconductor | ||
Memory Size 256kbit | ||
Organisation 32K x 8 bit | ||
Interface Type Parallel | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 70ns | ||
Mounting Type Surface Mount | ||
Package Type TSOP | ||
Pin Count 32 | ||
Dimensions 11.9 x 8.1 x 1.02mm | ||
Length 11.9mm | ||
Width 8.1mm | ||
Maximum Operating Supply Voltage 3.6 V | ||
Height 1.02mm | ||
Maximum Operating Temperature +85 °C | ||
Number of Bits per Word 8bit | ||
Minimum Operating Supply Voltage 2 V | ||
Number of Words 32K | ||
Minimum Operating Temperature -40 °C | ||
- COO (Country of Origin):
- TW
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.