Infineon 4Mbit Parallel FRAM Memory 44-Pin TSOP, FM22L16-55-TG
- RS Stock No.:
- 171-0958
- Mfr. Part No.:
- FM22L16-55-TG
- Brand:
- Cypress Semiconductor
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 171-0958
- Mfr. Part No.:
- FM22L16-55-TG
- Brand:
- Cypress Semiconductor
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Cypress Semiconductor | |
| Memory Size | 4Mbit | |
| Organisation | 256K x 16 bit | |
| Interface Type | Parallel | |
| Maximum Random Access Time | 55ns | |
| Mounting Type | Surface Mount | |
| Package Type | TSOP | |
| Pin Count | 44 | |
| Dimensions | 18.51 x 10.26 x 1.04mm | |
| Maximum Operating Supply Voltage | 3.6 V | |
| Maximum Operating Temperature | +85 °C | |
| Minimum Operating Supply Voltage | 2.7 V | |
| Number of Bits per Word | 16bit | |
| Minimum Operating Temperature | -40 °C | |
| Number of Words | 256K | |
| Select all | ||
|---|---|---|
Brand Cypress Semiconductor | ||
Memory Size 4Mbit | ||
Organisation 256K x 16 bit | ||
Interface Type Parallel | ||
Maximum Random Access Time 55ns | ||
Mounting Type Surface Mount | ||
Package Type TSOP | ||
Pin Count 44 | ||
Dimensions 18.51 x 10.26 x 1.04mm | ||
Maximum Operating Supply Voltage 3.6 V | ||
Maximum Operating Temperature +85 °C | ||
Minimum Operating Supply Voltage 2.7 V | ||
Number of Bits per Word 16bit | ||
Minimum Operating Temperature -40 °C | ||
Number of Words 256K | ||
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.