onsemi 1200V 21A, Schottky Diode, 3-Pin D2PAK FFSB10120A-F085
- RS Stock No.:
- 185-9135
- Mfr. Part No.:
- FFSB10120A-F085
- Brand:
- onsemi
Discontinued product
- RS Stock No.:
- 185-9135
- Mfr. Part No.:
- FFSB10120A-F085
- Brand:
- onsemi
Technical Reference
Legislation and Compliance
Non Compliant
- COO (Country of Origin):
- CN
Product Details
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Max Junction Temperature 175°C
PPAP Capable
No Reverse Recovery/No Forward Recovery
Ease of Paralleling
High Surge Current Capacity
Positive Temperature Coefficient
Applications
Automotive HEV−EV Onboard Chargers
Automotive HEV−EV DC−DC Converters
PPAP Capable
No Reverse Recovery/No Forward Recovery
Ease of Paralleling
High Surge Current Capacity
Positive Temperature Coefficient
Applications
Automotive HEV−EV Onboard Chargers
Automotive HEV−EV DC−DC Converters
Specifications
Attribute | Value |
|---|---|
| Mounting Type | Surface Mount |
| Package Type | D2PAK |
| Maximum Continuous Forward Current | 21A |
| Peak Reverse Repetitive Voltage | 1200V |
| Diode Configuration | Single |
| Diode Type | Schottky |
| Pin Count | 3 |
| Number of Elements per Chip | 1 |
| Diode Technology | Schottky |
| Peak Non-Repetitive Forward Surge Current | 850A |