N-Channel MOSFET, 300 A, 100 V, 8-Pin HSOF-8 Infineon IPT020N10N3ATMA1
- RS Stock No.:
- 906-4356
- Mfr. Part No.:
- IPT020N10N3ATMA1
- Brand:
- Infineon
3988 In stock - FREE next working day delivery available
Added
Price Each (In a Pack of 2)
£6.80
(exc. VAT)
£8.16
(inc. VAT)
| Units | Per unit | Per Pack* |
| 2 - 8 | £6.80 | £13.60 |
| 10 - 18 | £5.915 | £11.83 |
| 20 - 48 | £5.51 | £11.02 |
| 50 - 98 | £5.17 | £10.34 |
| 100 + | £4.76 | £9.52 |
| *price indicative | ||
- RS Stock No.:
- 906-4356
- Mfr. Part No.:
- IPT020N10N3ATMA1
- Brand:
- Infineon
Legislation and Compliance
RoHS Status: Not Applicable
Product Details
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 300 A |
| Maximum Drain Source Voltage | 100 V |
| Series | OptiMOS 3 |
| Package Type | HSOF-8 |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 3.7 mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation | 375 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Typical Gate Charge @ Vgs | 156 nC @ 10 V |
| Maximum Operating Temperature | +175 °C |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Width | 10.1mm |
| Length | 10.58mm |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 1V |
| Height | 2.4mm |