- RS Stock No.:
- 906-4353
- Mfr. Part No.:
- IPB010N06NATMA1
- Brand:
- Infineon
- RS Stock No.:
- 906-4353
- Mfr. Part No.:
- IPB010N06NATMA1
- Brand:
- Infineon
Legislation and Compliance
RoHS Status: Not Applicable
Product Details
Infineon OptiMOS™5 Power MOSFETs
OptiMOS™ 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter.
Summary of Features
- Optimized for synchronous rectification
- 40% lower R DS(on) than alternative devices
- 40% improvement of FOM over similar devices
- RoHS compliant - halogen free
- MSL1 rated
- Optimized for synchronous rectification
- 100%avalanchetested
- Superior thermal resistance
- N-channel, normal level
- Qualified according to JEDEC1) for target applications
- Pb-free lead plating; RoHS compliant
- Halogen-free according to IEC61249-2-21
Benefits
- Highest system efficiency
- Less paralleling required
- Increased power density
- System cost reduction
- Very low voltage overshoot
Potential Applications
- Synchronous rectification
- Solar micro inverter
- Isolated DC-DC converters
- Motor control for 12-48V systems
- Or-ing switches
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 180 A |
Maximum Drain Source Voltage | 60 V |
Package Type | D2PAK-7 |
Mounting Type | Surface Mount |
Pin Count | 7 |
Maximum Drain Source Resistance | 1.5 mΩ |
Channel Mode | Enhancement |
Maximum Power Dissipation | 300 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Transistor Material | Si |
Width | 4.57mm |
Maximum Operating Temperature | +175 °C |
Typical Gate Charge @ Vgs | 208 nC @ 10 V |
Length | 10.31mm |
Number of Elements per Chip | 1 |
Height | 9.45mm |
Forward Diode Voltage | 4.2V |
Minimum Operating Temperature | -55 °C |
Series | OptiMOS 5 |