GaN N-Channel MOSFET, 17 A, 600 V, 3-Pin TO-220 onsemi NTP8G206NG

Discontinued product

Technical Reference

MOSFET Transistors, ON Semiconductor

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	17 A
Maximum Drain Source Voltage	600 V
Package Type	TO-220
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	180 mΩ
Channel Mode	Enhancement
Maximum Power Dissipation	96 W
Transistor Configuration	Cascode
Maximum Gate Source Voltage	-18 V, +18 V
Typical Gate Charge @ Vgs	6.2 nC @ 4.5 V
Length	10.53mm
Transistor Material	GaN
Number of Elements per Chip	1
Width	4.83mm
Maximum Operating Temperature	+150 °C
Height	15.75mm
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	2.2V