Dual N-Channel MOSFET, 6.7 A, 7.4 A, 30 V, 8-Pin SOIC Vishay SI4914BDY-T1-GE3
- RS Stock No.:
- 818-1306
- Mfr. Part No.:
- SI4914BDY-T1-GE3
- Brand:
- Vishay
Discontinued
- RS Stock No.:
- 818-1306
- Mfr. Part No.:
- SI4914BDY-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 6.7 A, 7.4 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SOIC | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 25 mΩ, 27 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 2.7 W, 3.1 W | |
| Transistor Configuration | Series | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 2 | |
| Width | 4mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 6.7 nC @ 4.5 v, 7 nC @ 4.5 V | |
| Length | 5mm | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.55mm | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 6.7 A, 7.4 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOIC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 25 mΩ, 27 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 2.7 W, 3.1 W | ||
Transistor Configuration Series | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 2 | ||
Width 4mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 6.7 nC @ 4.5 v, 7 nC @ 4.5 V | ||
Length 5mm | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 1.55mm | ||
Dual N-Channel MOSFET, Vishay Semiconductor
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