Nexperia BSP41,115 NPN Transistor, 1 A, 60 V, 4-Pin SOT-223

  • RS Stock No. 484-2606
  • Mfr. Part No. BSP41,115
  • Brand Nexperia
Technical Reference
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

General Purpose NPN Transistors, Nexperia

Bipolar Transistors, Nexperia

Specifications
Attribute Value
Transistor Type NPN
Maximum DC Collector Current 1 A
Maximum Collector Emitter Voltage 60 V
Package Type SOT-223 (SC-73)
Mounting Type Surface Mount
Maximum Power Dissipation 1.3 W
Minimum DC Current Gain 30
Transistor Configuration Single
Maximum Collector Base Voltage 70 V
Maximum Emitter Base Voltage 5 V
Maximum Operating Frequency 100 MHz
Pin Count 4
Number of Elements per Chip 1
Minimum Operating Temperature -65 °C
Maximum Operating Temperature +150 °C
Length 6.7mm
Width 3.7mm
Maximum Base Emitter Saturation Voltage 1.2 V
Dimensions 1.7 x 6.7 x 3.7mm
Height 1.7mm
Maximum Collector Emitter Saturation Voltage 0.5 V
950 In stock - FREE next working day delivery available
Price Each (In a Pack of 10)
£ 0.397
(exc. VAT)
£ 0.476
(inc. VAT)
Units
Per unit
Per Pack*
10 - 10
£0.397
£3.97
20 - 40
£0.206
£2.06
50 - 90
£0.18
£1.80
100 - 190
£0.144
£1.44
200 +
£0.125
£1.25
*price indicative
Packaging Options:
Related Products
Bipolar Junction Transistors (BJT) broad range provides complete ...
Description:
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
A broad range of NPN and PNP Bipolar ...
Description:
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
2SC5876U3 is the high speed switching transistor for ...
Description:
2SC5876U3 is the high speed switching transistor for low frequency amplifier, high speed switching. High speed switching. (Tf:Typ.:80ns at IC=500m A)Low saturation voltage, typically (Typ.:150mV at IC=100mA, IB=10m A)Strong discharge power for inductive load and capacitance load.Complements the 2SA2088U3.
A range of NXP BISS (Breakthrough In Small ...
Description:
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency ...