ON Semi NSVT65011MW6T1G Dual NPN Transistor, 100 mA, 65 V, 6-Pin SOT-363

Technical Reference
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

Dual Matched Bipolar Transistors, ON Semiconductor

Pairs of NPN or PNP bipolar transistors in a single package matched for Base-Emitter voltage (VBE) and Current Gain (hFE).

Specifications
Attribute Value
Transistor Type NPN
Maximum DC Collector Current 100 mA
Maximum Collector Emitter Voltage 65 V
Package Type SOT-363 (SC-88)
Mounting Type Surface Mount
Maximum Power Dissipation 380 mW
Minimum DC Current Gain 150
Transistor Configuration Isolated
Maximum Collector Base Voltage 80 V
Maximum Emitter Base Voltage 6 V
Maximum Operating Frequency 100 MHz
Pin Count 6
Number of Elements per Chip 2
Height 1mm
Width 1.35mm
Maximum Operating Temperature +150 °C
Dimensions 2.2 x 1.35 x 1mm
Maximum Base Emitter Saturation Voltage 950 mV
Maximum Collector Emitter Saturation Voltage 600 mV
Length 2.2mm
Automotive Standard AEC-Q101
Minimum Operating Temperature -55 °C
Discontinued product