Fairchild HGTG40N60A4 IGBT, 75 A 600 V, 3-Pin TO-247

Technical Reference
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 75 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±20V
Package Type TO-247
Mounting Type Through Hole
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 15.87mm
Width 4.82mm
Height 20.82mm
Dimensions 15.87 x 4.82 x 20.82mm
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -55 °C
Available to back order for despatch when stock is available
Price Each (In a Tube of 30)
£ 8.81
(exc. VAT)
£ 10.57
(inc. VAT)
Units
Per unit
Per Tube*
30 - 120
£8.81
£264.30
150 - 270
£7.648
£229.44
300 +
£7.268
£218.04
*price indicative
Related Products
A range of IGBT Transistors from Infineon with ...
Description:
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring Trench Stop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode. • Collector-emitter voltage range 600 to 650V• Very low VCEsat• Low turn-off losses• Short tail current• Low EMI• ...
Insulated Gate Bipolar Transistors (IGBT) for motor drive ...
Description:
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
Optimised IGBTs designed for medium frequency applications with ...
Description:
Optimised IGBTs designed for medium frequency applications with fast response and provide the user with the highest efficiency available. Utilising FRED diodes optimised to provide the best performance with IGBT's.
A range of Field Stop Trench IGBTs from ...
Description:
A range of Field Stop Trench IGBTs from Fairchild Semiconductor that have been stress tested and meet the AEC-Q101 standard. • Positive temperaure co-efficient for easy parallel operation• High current capability• Low saturation voltage• High input impedance• Tightened parameter distribution.