Infineon BFP620H7764XTSA1 NPN Transistor, 80 mA, 2.3 V, 4-Pin SOT-343

  • RS Stock No. 110-7735P
  • Mfr. Part No. BFP620H7764XTSA1
  • Brand Infineon
Technical Reference
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

SiGe RF Bipolar Transistors, Infineon

A range of ultra-low-noise wideband NPN bipolar RF transistors from Infineon. These hetero-junction bipolar devices utilize Infineon’s silicon germanium carbon (SiGe:C) material technology and are especially suited for use mobile applications in which low power consumption is a key requirement. With typical transition frequencies of up to 65 GHz these devices offer high power gain at frequencies of up to 10 GHz when used in amplifier applications. The transistors include internal circuitry for ESD and excessive RF input power protection.

Bipolar Transistors, Infineon

Specifications
Attribute Value
Transistor Type NPN
Maximum DC Collector Current 80 mA
Maximum Collector Emitter Voltage 2.3 V
Package Type SOT-343
Mounting Type Surface Mount
Maximum Power Dissipation 185 mW
Minimum DC Current Gain 110
Transistor Configuration Single
Maximum Collector Base Voltage 7.5 V
Maximum Emitter Base Voltage 1.2 V
Pin Count 4
Number of Elements per Chip 1
Minimum Operating Temperature -65 °C
Length 2mm
Transistor Material SiGe
Height 0.8mm
Width 1.25mm
Dimensions 2 x 1.25 x 0.8mm
Maximum Operating Temperature +150 °C
Discontinued product