Nexperia PBSS306NZ,135 NPN Transistor, 5.1 A, 100 V, 4-Pin SOT-223

  • RS Stock No. 485-638P
  • Mfr. Part No. PBSS306NZ,135
  • Brand Nexperia
Technical Reference
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

Low Saturation Voltage NPN Transistors

A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.

Bipolar Transistors, Nexperia

Specifications
Attribute Value
Transistor Type NPN
Maximum DC Collector Current 5.1 A
Maximum Collector Emitter Voltage 100 V
Package Type SOT-223 (SC-73)
Mounting Type Surface Mount
Maximum Power Dissipation 2 W
Minimum DC Current Gain 30
Transistor Configuration Single
Maximum Collector Base Voltage 100 V
Maximum Emitter Base Voltage 5 V
Maximum Operating Frequency 110 MHz
Pin Count 4
Number of Elements per Chip 1
Maximum Collector Emitter Saturation Voltage 0.3 V
Height 1.7mm
Dimensions 1.7 x 6.7 x 3.7mm
Width 3.7mm
Maximum Operating Temperature +150 °C
Length 6.7mm
Minimum Operating Temperature -65 °C
Maximum Base Emitter Saturation Voltage 1.05 V
4000 In stock - FREE next working day delivery available
Price Each (Supplied on a Reel) Quantities below 150 on continuous strip
£ 0.367
(exc. VAT)
£ 0.44
(inc. VAT)
Units
Per unit
100 - 380
£0.367
400 - 980
£0.326
1000 +
£0.318
Packaging Options:
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