Nexperia PBSS4160DS,115 Dual NPN Transistor, 1 A, 60 V, 6-Pin TSOP

  • RS Stock No. 485-391
  • Mfr. Part No. PBSS4160DS,115
  • Brand Nexperia
Technical Reference
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): MY
Product Details

Low Saturation Voltage NPN Transistors

A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.


Bipolar Transistors, Nexperia

Attribute Value
Transistor Type NPN
Maximum DC Collector Current 1 A
Maximum Collector Emitter Voltage 60 V
Package Type TSOP
Mounting Type Surface Mount
Maximum Power Dissipation 700 mW
Minimum DC Current Gain 100
Transistor Configuration Isolated
Maximum Collector Base Voltage 80 V
Maximum Emitter Base Voltage 5 V
Maximum Operating Frequency 220 MHz
Pin Count 6
Number of Elements per Chip 2
Maximum Operating Temperature +150 °C
Length 3.1mm
Width 1.7mm
Minimum Operating Temperature -65 °C
Maximum Collector Emitter Saturation Voltage 0.25 V
Height 1mm
Dimensions 1 x 3.1 x 1.7mm
Maximum Base Emitter Saturation Voltage 1.1 V
22720 In stock - FREE next working day delivery available
Price Each (In a Pack of 20)
£ 0.08
(exc. VAT)
£ 0.10
(inc. VAT)
Per unit
Per Pack*
20 +
*price indicative
Packaging Options:
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