Nexperia PMMT591A,215 PNP Transistor, 1 A, 40 V, 3-Pin SOT-23

  • RS Stock No. 485-325P
  • Mfr. Part No. PMMT591A,215
  • Brand Nexperia
Technical Reference
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

Low Saturation Voltage PNP Transistors

A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.

Bipolar Transistors, Nexperia

Specifications
Attribute Value
Transistor Type PNP
Maximum DC Collector Current 1 A
Maximum Collector Emitter Voltage 40 V
Package Type SOT-23 (TO-236AB)
Mounting Type Surface Mount
Maximum Power Dissipation 250 mW
Minimum DC Current Gain 160
Transistor Configuration Single
Maximum Collector Base Voltage 40 V
Maximum Emitter Base Voltage 5 V
Maximum Operating Frequency 150 MHz
Pin Count 3
Number of Elements per Chip 1
Width 1.4mm
Length 3mm
Maximum Operating Temperature +150 °C
Maximum Base Emitter Saturation Voltage 1.1 V
Dimensions 1 x 3 x 1.4mm
Height 1mm
Maximum Collector Emitter Saturation Voltage 0.5 V
Minimum Operating Temperature -65 °C
Discontinued product