Nexperia PBSS4160DPN,115 Dual NPN + PNP Transistor, 1 A, 60 V, 6-Pin TSOP

  • RS Stock No. 485-313P
  • Mfr. Part No. PBSS4160DPN,115
  • Brand Nexperia
Technical Reference
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): MY
Product Details

Low Saturation Voltage Dual NPN/PNP Transistors, Nexperia

A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage Dual NPN/PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.

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Bipolar Transistors, Nexperia

Specifications
Attribute Value
Transistor Type NPN + PNP
Maximum DC Collector Current 1 A
Maximum Collector Emitter Voltage 60 V
Package Type TSOP
Mounting Type Surface Mount
Maximum Power Dissipation 700 mW
Minimum DC Current Gain 100
Transistor Configuration Isolated
Maximum Collector Base Voltage 80 V
Maximum Emitter Base Voltage 5 V
Maximum Operating Frequency 185 (PNP) MHz, 220 (NPN) MHz
Pin Count 6
Number of Elements per Chip 2
Dimensions 1 x 3.1 x 1.7mm
Height 1mm
Maximum Collector Emitter Saturation Voltage 0.33 V
Minimum Operating Temperature -65 °C
Length 3.1mm
Maximum Operating Temperature +150 °C
Width 1.7mm
Maximum Base Emitter Saturation Voltage 1.1 V
1160 In stock - FREE next working day delivery available
Price Each (Supplied on a Reel) Quantities below 150 on continuous strip
£ 0.206
(exc. VAT)
£ 0.247
(inc. VAT)
Units
Per unit
20 +
£0.206
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