ON Semi MJ15003G NPN Transistor, 20 A, 140 V, 2-Pin TO-204AA

Technical Reference
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

NPN Power Transistors, ON Semiconductor

Standards

Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.

The ON Semiconductor MJ15003G is a 140V, 20A NPN bipolar transistor within a TO-204-2 package. It is designed for high-power audio, disk head positioners and other linear applications.

• High safe operating area
• For low distortion complementary design
• High DC current gain
• TO-204AA metal case

Alternative Options:
296-273 - MJ15004G PNP (single)
122-0070 - MJ15004G PNP (tray of 100)

Specifications
Attribute Value
Transistor Type NPN
Maximum DC Collector Current 20 A
Maximum Collector Emitter Voltage 140 V
Package Type TO-204AA
Mounting Type Through Hole
Maximum Power Dissipation 250 W
Minimum DC Current Gain 25
Transistor Configuration Single
Maximum Collector Base Voltage 140 V
Maximum Emitter Base Voltage 5 V
Maximum Operating Frequency 2 MHz
Pin Count 2
Number of Elements per Chip 1
Dimensions 39.37 x 26.67 x 8.51mm
Height 8.51mm
Width 26.67mm
Length 39.37mm
Maximum Operating Temperature +200 °C
Maximum Collector Emitter Saturation Voltage 1 V
Minimum Operating Temperature -65 °C
501 In stock - FREE next working day delivery available
Price Each
£ 5.54
(exc. VAT)
£ 6.65
(inc. VAT)
Units
Per unit
1 - 4
£5.54
5 - 24
£5.10
25 - 49
£4.71
50 +
£4.32
Related Products
2SC5198-O(Q) | Toshiba 2SC5198-O(Q) NPN Transistor, 10 A, ...
Description:
2SC5198-O(Q) | Toshiba 2SC5198-O(Q) NPN Transistor, 10 A, 140 V, 3-Pin TO-3PN
The ON Semiconductor MJ15024G is a 250V, 16A ...
Description:
The ON Semiconductor MJ15024G is a 250V, 16A NPN bipolar transistor within a TO-204-2 package. It is designed for high-power audio, disk head positioners and other linear applications. • High safe operating area• High DC current gain• TO-204AA metal case. Versions Available:122-0087 - tray of 100544-9646 - single Alternative Options:122-0088 ...
PMBT5550,215 | Nexperia PMBT5550,215 NPN Transistor, 300 mA, ...
Description:
PMBT5550,215 | Nexperia PMBT5550,215 NPN Transistor, 300 mA, 140 V, 3-Pin SOT-23
The device is a NPN transistor manufactured using ...
Description:
The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. High breakdown voltage VCEO = 140 VTypical ft = 20 MHz Fully characterized at 125 oC.