Diodes Inc N-Channel MOSFET, 17 A, 100 V, 3-Pin DPAK DMN10H099SK3-13
- RS Stock No.:
- 921-1044P
- Mfr. Part No.:
- DMN10H099SK3-13
- Brand:
- DiodesZetex
Subtotal 20 units (supplied on a continuous strip)*
£6.92
(exc. VAT)
£8.30
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 2,420 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 20 + | £0.346 |
*price indicative
- RS Stock No.:
- 921-1044P
- Mfr. Part No.:
- DMN10H099SK3-13
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 17 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 99 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3V | |
| Minimum Gate Threshold Voltage | 1.5V | |
| Maximum Power Dissipation | 34 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 6.2mm | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 25.2 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Width | 6.7mm | |
| Forward Diode Voltage | 0.77V | |
| Height | 2.39mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type N | ||
Maximum Continuous Drain Current 17 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 99 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3V | ||
Minimum Gate Threshold Voltage 1.5V | ||
Maximum Power Dissipation 34 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 6.2mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 25.2 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Width 6.7mm | ||
Forward Diode Voltage 0.77V | ||
Height 2.39mm | ||
Minimum Operating Temperature -55 °C | ||
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.