| Channel Type | N |
| Maximum Continuous Drain Current | 11.5 A |
| Maximum Drain Source Voltage | 900 V |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 360 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.5V |
| Minimum Gate Threshold Voltage | 1.8V |
| Maximum Power Dissipation | 54 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -8 V, +18 V |
| Number of Elements per Chip | 1 |
| Transistor Material | SiC |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +150 °C |
| Forward Diode Voltage | 4.8V |
| Width | 21.1mm |
| Height | 5.21mm |
| Length | 16.13mm |
| Typical Gate Charge @ Vgs | 9.5 nC @ 15 V |
