Channel Type | N |
Maximum Continuous Drain Current | 11.5 A |
Maximum Drain Source Voltage | 900 V |
Package Type | TO-247 |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 360 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 3.5V |
Minimum Gate Threshold Voltage | 1.8V |
Maximum Power Dissipation | 54 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -8 V, +18 V |
Number of Elements per Chip | 1 |
Transistor Material | SiC |
Minimum Operating Temperature | -55 °C |
Maximum Operating Temperature | +150 °C |
Forward Diode Voltage | 4.8V |
Width | 21.1mm |
Height | 5.21mm |
Length | 16.13mm |
Typical Gate Charge @ Vgs | 9.5 nC @ 15 V |