N-Channel MOSFET, 70 A, 600 V, 3-Pin TO-247AC Vishay SiHG70N60EF-GE3
- RS Stock No.:
- 903-4475
- Mfr. Part No.:
- SiHG70N60EF-GE3
- Brand:
- Vishay
Available to back order for despatch 27/08/2025
Added
Price Each
£10.37
(exc. VAT)
£12.44
(inc. VAT)
| Units | Per unit |
| 1 - 9 | £10.37 |
| 10 - 24 | £9.85 |
| 25 - 49 | £9.33 |
| 50 - 99 | £8.30 |
| 100 + | £7.88 |
- RS Stock No.:
- 903-4475
- Mfr. Part No.:
- SiHG70N60EF-GE3
- Brand:
- Vishay
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor
Reduced Reverse Recovery Time, Reverse Recovery Charge, and Reverse Recovery Current
Low figure-of-merit (FOM)
Low input capacitance (Ciss)
Increased robustness due to low Reverse Recovery Charge
Ultra low gate charge (Qg)
Low figure-of-merit (FOM)
Low input capacitance (Ciss)
Increased robustness due to low Reverse Recovery Charge
Ultra low gate charge (Qg)
MOSFET Transistors, Vishay Semiconductor
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 70 A |
| Maximum Drain Source Voltage | 600 V |
| Package Type | TO-247AC |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 38 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 520 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Width | 5.31mm |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 253 nC @ 10 V |
| Transistor Material | Si |
| Length | 15.87mm |
| Number of Elements per Chip | 1 |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 1.2V |
| Height | 20.82mm |
| Series | EF Series |
- RS Stock No.:
- 903-4475
- Mfr. Part No.:
- SiHG70N60EF-GE3
- Brand:
- Vishay