P-Channel MOSFET, 1.17 A, 60 V, 3-Pin SOT-223 Infineon BSP315PH6327XTSA1
- RS Stock No.:
- 826-9238
- Mfr. Part No.:
- BSP315PH6327XTSA1
- Brand:
- Infineon
Available to back order for despatch 25/04/2024
Added
Price Each (In a Pack of 50)
£0.65
(exc. VAT)
£0.78
(inc. VAT)
| Units | Per unit | Per Pack* |
| 50 - 50 | £0.65 | £32.50 |
| 100 - 200 | £0.501 | £25.05 |
| 250 - 450 | £0.468 | £23.40 |
| 500 - 1200 | £0.436 | £21.80 |
| 1250 + | £0.403 | £20.15 |
| *price indicative | ||
- RS Stock No.:
- 826-9238
- Mfr. Part No.:
- BSP315PH6327XTSA1
- Brand:
- Infineon
Legislation and Compliance
Product Details
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant
· Pb-free lead plating, RoHS compliant
The Infineon BSP315P OptiMOS families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.
P-Channel
Enhancement mode
Avalanche rated
Logic Level
Enhancement mode
Avalanche rated
Logic Level
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 1.17 A |
| Maximum Drain Source Voltage | 60 V |
| Series | SIPMOS |
| Package Type | SOT-223 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 800 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2V |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 1.8 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +150 °C |
| Length | 6.5mm |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Width | 3.5mm |
| Typical Gate Charge @ Vgs | 5.2 nC @ 10 V |
| Minimum Operating Temperature | -55 °C |
| Height | 1.6mm |
- RS Stock No.:
- 826-9238
- Mfr. Part No.:
- BSP315PH6327XTSA1
- Brand:
- Infineon
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