Diodes Inc P-Channel MOSFET, 3.7 A, 20 V, 3-Pin SOT-346 DMP2066LSN-7
- RS Stock No.:
- 822-2624P
- Mfr. Part No.:
- DMP2066LSN-7
- Brand:
- DiodesZetex
Bulk discount available
Subtotal 125 units (supplied on a continuous strip)*
£17.25
(exc. VAT)
£20.75
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 450 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 125 - 350 | £0.138 |
| 375 - 1475 | £0.131 |
| 1500 - 2975 | £0.123 |
| 3000 + | £0.12 |
*price indicative
- RS Stock No.:
- 822-2624P
- Mfr. Part No.:
- DMP2066LSN-7
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 3.7 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | SOT-346 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 70 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 1.25 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -12 V, +12 V | |
| Typical Gate Charge @ Vgs | 10.1 nC @ 4.5 V | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Width | 1.7mm | |
| Length | 3.1mm | |
| Height | 1.3mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type P | ||
Maximum Continuous Drain Current 3.7 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type SOT-346 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 70 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 1.25 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -12 V, +12 V | ||
Typical Gate Charge @ Vgs 10.1 nC @ 4.5 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Width 1.7mm | ||
Length 3.1mm | ||
Height 1.3mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, 12V to 25V, Diodes Inc
MOSFET Transistors, Diodes Inc.