Diodes Inc Dual N-Channel MOSFET, 260 mA, 30 V, 6-Pin SOT-363 DMN63D8LDW-7
- RS Stock No.:
- 822-2598P
- Mfr. Part No.:
- DMN63D8LDW-7
- Brand:
- DiodesZetex
Bulk discount available
Subtotal 500 units (supplied on a reel)*
£27.00
(exc. VAT)
£32.50
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 26 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 500 - 900 | £0.054 |
| 1000 - 1400 | £0.039 |
| 1500 - 2900 | £0.034 |
| 3000 + | £0.031 |
*price indicative
- RS Stock No.:
- 822-2598P
- Mfr. Part No.:
- DMN63D8LDW-7
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 260 mA | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SOT-363 | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 13 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.5V | |
| Maximum Power Dissipation | 400 mW | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 2 | |
| Length | 2.2mm | |
| Typical Gate Charge @ Vgs | 0.87 nC @ 10 V | |
| Transistor Material | Si | |
| Width | 1.35mm | |
| Maximum Operating Temperature | +150 °C | |
| Height | 1mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type N | ||
Maximum Continuous Drain Current 260 mA | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOT-363 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 13 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.5V | ||
Maximum Power Dissipation 400 mW | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 2 | ||
Length 2.2mm | ||
Typical Gate Charge @ Vgs 0.87 nC @ 10 V | ||
Transistor Material Si | ||
Width 1.35mm | ||
Maximum Operating Temperature +150 °C | ||
Height 1mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
Dual N-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.